TRS12N65FB,S1Q Toshiba Semiconductor and Storage Diode Arrays

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tube
Product Status: Active
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Operating Temperature - Junction: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: TRS12N65