APT65GP60L2DQ2G Microchip Technology Transistors - IGBTs - Single

Mfr: Microchip Technology
Series: POWER MOS 7®
Package: Tube
Product Status: Active
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 198 A
Current - Collector Pulsed (Icm): 250 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Power - Max: 833 W
Switching Energy: 605µJ (on), 895µJ (off)
Input Type: Standard
Gate Charge: 210 nC
Td (on/off) @ 25°C: 30ns/90ns
Test Condition: 400V, 65A, 5Ohm, 15V
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Base Product Number: APT65GP60