APT75GP120B2G Microchip Technology Transistors - IGBTs - Single

Mfr: Microchip Technology
Series: POWER MOS 7®
Package: Tube
Product Status: Active
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
Power - Max: 1042 W
Switching Energy: 1620µJ (on), 2500µJ (off)
Input Type: Standard
Gate Charge: 320 nC
Td (on/off) @ 25°C: 20ns/163ns
Test Condition: 600V, 75A, 5Ohm, 15V
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Base Product Number: APT75GP120