APT13GP120BDQ1G Microchip Technology Transistors - IGBTs - Single

Mfr: Microchip Technology
Series: POWER MOS 7®
Package: Tube
Product Status: Active
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 41 A
Current - Collector Pulsed (Icm): 50 A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
Power - Max: 250 W
Switching Energy: 115µJ (on), 165µJ (off)
Input Type: Standard
Gate Charge: 55 nC
Td (on/off) @ 25°C: 9ns/28ns
Test Condition: 600V, 13A, 5Ohm, 15V
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Base Product Number: APT13GP120