HGTG10N120BND onsemi Transistors - IGBTs - Single

Mfr: onsemi
Series: -
Package: Tube
Product Status: Last Time Buy
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Current - Collector Pulsed (Icm): 80 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Power - Max: 298 W
Switching Energy: 850µJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 100 nC
Td (on/off) @ 25°C: 23ns/165ns
Test Condition: 960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr): 70 ns
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: HGTG10N120