NXH80T120L3Q0S3G onsemi Transistors - IGBTs - Modules

Mfr: onsemi
Series: -
Package: Tray
Product Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Power - Max: 188 W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 80A
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 18.15 nF @ 20 V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C~175°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 20-PIM/Q0PACK (55x32.5)