FF50R12RT4HOSA1 Infineon Technologies Transistors - IGBTs - Modules

Mfr: Infineon Technologies
Series: -
Package: Tray
Product Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 285 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C~150°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Base Product Number: FF50R12