NXH100B120H3Q0SG onsemi Transistors - IGBTs - Modules

Mfr: onsemi
Series: -
Package: Tray
Product Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 61 A
Power - Max: 186 W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C~150°C(TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 22-PIM/Q0BOOST (55x32.5)