DF200R12KE3HOSA1 Infineon Technologies Transistors - IGBTs - Modules

Mfr: Infineon Technologies
Series: -
Package: Bulk
Product Status: Active
IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1040 W
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C~125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Base Product Number: DF200R12