IRFD9113 Harris Corporation Transistors - FETs MOSFETs - Single

Mfr: Harris Corporation
Series: -
Package: Bulk
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Package / Case: 4-DIP (0.300\ 7.62mm)
Base Product Number: IRFD9113