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SCT3160KLHRC11 Rohm Semiconductor Transistors - FETs MOSFETs - Single

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Description of your requirements:

Mfr: Rohm Semiconductor
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Not For New Designs
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Vgs (Max): +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 103W
Operating Temperature: 175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3
Base Product Number: SCT3160

Datasheet

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