Mfr: Infineon Technologies
Series: HEXFET®
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 54A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 5 V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Product Number: IRL2505
