FBG30N04CC EPC Space, LLC Transistors - FETs MOSFETs - Single

Mfr: EPC Space, LLC
Series: -
Package: Tray
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id: 2.8V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
Vgs (Max): +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, No Lead