NTE2393 NTE Electronics, Inc Transistors - FETs MOSFETs - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 670mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3