SI8489EDB-T2-E1 Vishay Siliconix Transistors - FETs MOSFETs - Single

Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3.06A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-UFBGA
Base Product Number: SI8489