RFP10N15L Harris Corporation Transistors - FETs MOSFETs - Single

Mfr: Harris Corporation
Series: -
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3