Mfr: Renesas Electronics America Inc
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-WFDFN Exposed Pad
