GP2T080A120U SemiQ Transistors - FETs MOSFETs - Single

Mfr: SemiQ
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 20 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 188W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Product Number: GP2T080A