TP90H050WS Transphorm Transistors - FETs MOSFETs - Single

Mfr: Transphorm
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Operating Temperature: -55°C~150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Base Product Number: TP90H050