IXTA3N100D2HV IXYS Transistors - FETs MOSFETs - Single

Mfr: IXYS
Series: Depletion
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263HV
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: IXTA3