IXTN660N04T4 IXYS Transistors - FETs MOSFETs - Single

Mfr: IXYS
Series: Trench
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 1040W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Base Product Number: IXTN660