N0412N-S19-AY Renesas Electronics America Inc Transistors - FETs MOSFETs - Single

Mfr: Renesas Electronics America Inc
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Operating Temperature: 150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Product Number: N0412N-S19