TW027N65C,S1F Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3