Mfr: IXYS
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 36mA
Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
Vgs (Max): +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): -
Operating Temperature: -40°C~150°C(TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC
Base Product Number: IXFN90