NTH4L160N120SC1 onsemi Transistors - FETs MOSFETs - Single

Mfr: onsemi
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Vgs (Max): +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 111W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4
Base Product Number: NTH4L160