SCT2H12NZGC11 Rohm Semiconductor Transistors - FETs MOSFETs - Single

Mfr: Rohm Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id: 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Vgs (Max): +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Operating Temperature: 175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PFM
Package / Case: TO-3PFM, SC-93-3
Base Product Number: SCT2H12