AS1M040120P ANBON SEMICONDUCTOR (INT'L) LIMITED Transistors - FETs MOSFETs - Single

Mfr: ANBON SEMICONDUCTOR (INT'L) LIMITED
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 20 V
Vgs (Max): +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 2946 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3