XK1R9F10QB,LXGQ Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSX-H
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: TO-220SM(W)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: XK1R9F10