SSM3J378R,LXHF Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: Automotive, AEC-Q101, U-MOSVI
Package: Tape & Reel (TR); Cut Tape (CT)
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Vgs (Max): +6V, -8V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads