G3R12MT12K GeneSiC Semiconductor Transistors - FETs MOSFETs - Single

Mfr: GeneSiC Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Vgs (Max): +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 567W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package / Case: TO-247-4
Base Product Number: G3R12M