XPW4R10ANB,L1XHQ Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
FET Feature: Standard
Power Dissipation (Max): 170W (Tc)
Operating Temperature: -55°C~175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-DSOP Advance
Package / Case: 8-PowerVDFN