XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVIII-H
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-SOIC (0.197\ 5.00mm Width)
Base Product Number: XPH6R30