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SIA433EDJ-T1-GE3 Vishay Siliconix Transistors - FETs MOSFETs - Single

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Description of your requirements:

Mfr: Vishay Siliconix
Series: TrenchFET®
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 8 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6
Base Product Number: SIA433

Datasheet

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