XPH4R714MC,L1XHQ Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSVI
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Vgs (Max): +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-SOIC (0.197\ 5.00mm Width)
Base Product Number: XPH4R714