IRF630NSTRLPBF Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: HEXFET®
Package: Tape & Reel (TR); Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 82W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: IRF630