GA20JT12-263 GeneSiC Semiconductor Transistors - FETs MOSFETs - Single

Mfr: GeneSiC Semiconductor
Series: -
Package: Tube
Product Status: Active
FET Type: -
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: 60mOhm @ 20A
Vgs(th) (Max) @ Id: -
Vgs (Max): -
Input Capacitance (Ciss) (Max) @ Vds: 3091 pF @ 800 V
FET Feature: -
Power Dissipation (Max): 282W (Tc)
Operating Temperature: 175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number: GA20JT12