Mfr: Microchip Technology
Series: -
Package: Bag
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 360mW (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can
Base Product Number: VN2210
