RM8N650T2 Rectron USA Transistors - FETs MOSFETs - Single

Mfr: Rectron USA
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3