BUZ32H3045A Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: SIPMOS®
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB