IPD130N10NF2SATMA1 Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: StrongIRFET??2
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63