IPP06CN10LG Infineon Technologies Transistors - FETs MOSFETs - Single

Mfr: Infineon Technologies
Series: OptiMOS??2
Package: Bulk
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3