Mfr: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS®-P2
Package: Tube
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Vgs (Max): +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 137W (Tc)
Operating Temperature: -55°C~175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3
Base Product Number: IPP80P03
