BSH207,135 NXP USA Inc. Transistors - FETs MOSFETs - Single

Mfr: NXP USA Inc.
Series: -
Package: Bulk
Product Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 1.52A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 9.6 V
FET Feature: -
Power Dissipation (Max): 417mW (Ta)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457