SCTWA90N65G2V-4 STMicroelectronics Transistors - FETs MOSFETs - Single

Mfr: STMicroelectronics
Series: -
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 18 V
Vgs (Max): +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 400 V
FET Feature: -
Power Dissipation (Max): 565W (Tc)
Operating Temperature: -55°C~200°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: HiP247??Long Leads
Package / Case: TO-247-3
Base Product Number: SCTWA90