BSM600C12P3G201 Rohm Semiconductor Transistors - FETs MOSFETs - Single

Mfr: Rohm Semiconductor
Series: -
Package: Tray
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 5.6V @ 182mA
Vgs (Max): +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 10 V
FET Feature: -
Power Dissipation (Max): 2460W (Tc)
Operating Temperature: 175°C(TJ)
Mounting Type: Chassis Mount
Supplier Device Package: Module
Package / Case: Module
Base Product Number: BSM600