Menu

2N6660 Solid State Inc. Transistors - FETs MOSFETs - Single

{{ product.price_format }}
{{ product.origin_price_format }}
Quantity:
Model: {{ product.model }}

{{ variable.name }}

{{ value.name }}
Request a quote

Description of your requirements:

Mfr: Solid State Inc.
Series: -
Package: Box
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±40V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 6.25W (Tc)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AD, TO-39-3 Metal Can

Datasheet

Cancel Submit
Add reviews
Add first reviews
  • {{ item.user_name }}
    {{ item.content }}
    Loading...
    {{ item.created_at }} {{ item.order_product_name }}