NTE2389 NTE Electronics, Inc Transistors - FETs MOSFETs - Single

Mfr: NTE Electronics, Inc
Series: -
Package: Bag
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): 30V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
FET Feature: -
Power Dissipation (Max): 125W (Ta)
Operating Temperature: 175°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3