SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSIII
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFV
Package / Case: 6-SMD (5 Leads), Flat Lead
Base Product Number: SSM5G10