SSM6J207FE,LF Toshiba Semiconductor and Storage Transistors - FETs MOSFETs - Single

Mfr: Toshiba Semiconductor and Storage
Series: U-MOSII
Package: Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Product Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 251mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Operating Temperature: 150°C(TJ)
Mounting Type: Surface Mount
Supplier Device Package: ES6
Package / Case: SOT-563, SOT-666
Base Product Number: SSM6J207