Mfr: Microchip Technology
Series: -
Package: Tape & Box (TB)
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 0V
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Vgs(th) (Max) @ Id: -
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
FET Feature: Depletion Mode
Power Dissipation (Max): 740mW (Ta)
Operating Temperature: -55°C~150°C(TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Base Product Number: LND150
